UES1106/TR Microchip Technology

Description: DIODE GEN PURP 400V 1A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Tape & Reel (TR).