UF1DLW RVG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Reverse Recovery Time (trr): 20 ns
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
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Technische Details UF1DLW RVG Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOD-123W, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Reverse Recovery Time (trr): 20 ns.
Weitere Produktangebote UF1DLW RVG nach Preis ab 0.3 EUR bis 0.95 EUR
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UF1DLW RVG | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A SOD123W Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 40pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C |
auf Bestellung 11518 Stücke: Lieferzeit 10-14 Tag (e) |
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