| Anzahl | Privatkunde |
|---|---|
| 1+ | 108.08 EUR |
| 10+ | 91.84 EUR |
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Technische Details UF3N120007K4S onsemi
Category: THT N channel transistors, Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; 1.2kV; 120A; 789W, Type of transistor: N-JFET / N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 120A, Pulsed drain current: 550A, Power dissipation: 789W, Case: TO247-4, Gate-source voltage: ±30V, On-state resistance: 15.5mΩ, Mounting: THT, Gate charge: 830nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Weitere Produktangebote UF3N120007K4S nach Preis ab 81.71 EUR bis 117.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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UF3N120007K4S | onsemi |
 Description: JFET N-CH 1200V 120A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 800V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 120 A Supplier Device Package: TO-247-4 Grade: Automotive Drain to Source Voltage (Vdss): 1.2 kV Power - Max: 789 W Resistance - RDS(On): 11 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 1.2 kV |
auf Bestellung 210 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3N120007K4S |
|
Hersteller: onsemi
Description: JFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 800V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 120 A
Supplier Device Package: TO-247-4
Grade: Automotive
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 789 W
Resistance - RDS(On): 11 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 1.2 kV
Description: JFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 800V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 120 A
Supplier Device Package: TO-247-4
Grade: Automotive
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 789 W
Resistance - RDS(On): 11 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 1.2 kV
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 117.62 EUR |
| 10+ | 89.89 EUR |
| 50+ | 81.71 EUR |