UG06D Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
| Anzahl | Preis |
|---|---|
| 40+ | 0.44 EUR |
| 60+ | 0.3 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
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Technische Details UG06D Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 600MA TS-1, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TS-1, Current - Average Rectified (Io): 600mA, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 15 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: T-18, Axial, Packaging: Tape & Reel (TR).
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auf Bestellung 830 Stücke: Lieferzeit 21-28 Tag (e) |