UG54GH Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1250+ | 0.33 EUR |
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Technische Details UG54GH Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 5A, Technology: Standard, Reverse Recovery Time (trr): 20 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Reel (TR).
Weitere Produktangebote UG54GH nach Preis ab 0.41 EUR bis 0.88 EUR
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UG54GH | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 5A DO201ADQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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