| Anzahl | Preis |
|---|---|
| 1+ | 3.56 EUR |
| 25+ | 3.1 EUR |
| 100+ | 2.68 EUR |
| 250+ | 2.46 EUR |
| 500+ | 2.31 EUR |
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Technische Details UJ3D06508TS Qorvo
Description: DIODE SIL CARB 650V 8A TO220-2, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote UJ3D06508TS nach Preis ab 2.24 EUR bis 6.21 EUR
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UJ3D06508TS | onsemi |
 Description: DIODE SIL CARB 650V 8A TO220-2Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 250pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 28073 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D06508TS | onsemi |
SiC Schottky Diodes 650V/8ASICDIODEG3TO22 |
auf Bestellung 1706 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3D06508TS |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 8A TO220-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 28073 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.59 EUR |
| 25+ | 3.12 EUR |
| 100+ | 2.7 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 2.24 EUR |
| UJ3D06508TS |
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Hersteller: onsemi
SiC Schottky Diodes 650V/8ASICDIODEG3TO22
SiC Schottky Diodes 650V/8ASICDIODEG3TO22
auf Bestellung 1706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.21 EUR |
| 10+ | 3.4 EUR |
| 500+ | 2.87 EUR |
| 1000+ | 2.75 EUR |