| Anzahl | Preis |
|---|---|
| 1+ | 4.05 EUR |
| 25+ | 3.52 EUR |
| 100+ | 3.03 EUR |
| 250+ | 2.8 EUR |
| 500+ | 2.6 EUR |
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Technische Details UJ3D06510TS Qorvo
Description: DIODE SIL CARB 650V 10A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 327pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote UJ3D06510TS nach Preis ab 2.53 EUR bis 6.81 EUR
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UJ3D06510TS | onsemi |
 Description: DIODE SIL CARB 650V 10A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 327pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 11657 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D06510TS | onsemi |
SiC Schottky Diodes 650V/10ASICDIODEG3TO220-2 |
auf Bestellung 687 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3D06510TS |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARB 650V 10A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 327pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 11657 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.08 EUR |
| 25+ | 3.55 EUR |
| 100+ | 3.06 EUR |
| 250+ | 2.82 EUR |
| 500+ | 2.63 EUR |
| 1000+ | 2.53 EUR |
| UJ3D06510TS |
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Hersteller: onsemi
SiC Schottky Diodes 650V/10ASICDIODEG3TO220-2
SiC Schottky Diodes 650V/10ASICDIODEG3TO220-2
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 3.45 EUR |
| 100+ | 3.24 EUR |
| 500+ | 3.12 EUR |