| Anzahl | Preis |
|---|---|
| 1+ | 4.66 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.5 EUR |
| 250+ | 3.22 EUR |
| 500+ | 2.99 EUR |
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Technische Details UJ3D1205TS Qorvo
Description: DIODE SIL CARBIDE 1200V 5A TO220, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 250pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 55 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2.
Weitere Produktangebote UJ3D1205TS nach Preis ab 3.46 EUR bis 8.94 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3D1205TS | onsemi |
 SiC Schottky Diodes 1200V/5ASICDIODEG3TO220-2 |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D1205TS | onsemi |
Description: DIODE SIL CARBIDE 1200V 5A TO220 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 250pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 55 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 |
auf Bestellung 20381 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3D1205TS |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/5ASICDIODEG3TO220-2
SiC Schottky Diodes 1200V/5ASICDIODEG3TO220-2
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.89 EUR |
| 10+ | 4.19 EUR |
| 100+ | 4.08 EUR |
| 500+ | 3.59 EUR |
| UJ3D1205TS |
|
Hersteller: onsemi
Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Description: DIODE SIL CARBIDE 1200V 5A TO220
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
auf Bestellung 20381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 8.94 EUR |
| 50+ | 4.71 EUR |
| 100+ | 4.3 EUR |
| 500+ | 3.59 EUR |
| 1000+ | 3.46 EUR |