| Anzahl | Preis |
|---|---|
| 1+ | 7.88 EUR |
| 25+ | 6.86 EUR |
| 100+ | 5.91 EUR |
| 250+ | 5.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ3D1210K2 Qorvo
Description: DIODE SIL CARB 1200V 10A TO2472, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 510pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 110 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2.
Weitere Produktangebote UJ3D1210K2 nach Preis ab 5.79 EUR bis 13.66 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UJ3D1210K2 | onsemi |
 Description: DIODE SIL CARB 1200V 10A TO2472Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 510pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 110 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 |
auf Bestellung 6415 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
UJ3D1210K2 | onsemi |
SiC Schottky Diodes 1200V/10ASICDIODEG3TO |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3D1210K2 |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Description: DIODE SIL CARB 1200V 10A TO2472
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
auf Bestellung 6415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.16 EUR |
| 30+ | 6.53 EUR |
| 120+ | 5.79 EUR |
| UJ3D1210K2 |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.66 EUR |
| 10+ | 8.38 EUR |
| 100+ | 6.69 EUR |