| Anzahl | Preis |
|---|---|
| 1+ | 8.29 EUR |
| 25+ | 7.2 EUR |
| 100+ | 6.21 EUR |
| 250+ | 5.77 EUR |
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Technische Details UJ3D1210KS Qorvo
Description: DIODE SIL CARB 1200V 10A TO2473, Current - Reverse Leakage @ Vr: 110 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 510pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote UJ3D1210KS nach Preis ab 6.6 EUR bis 14.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3D1210KS | onsemi |
 Description: DIODE SIL CARB 1200V 10A TO2473Current - Reverse Leakage @ Vr: 110 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 510pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D1210KS | onsemi |
SiC Schottky Diodes 1200V/10ASICDIODEG3TO |
auf Bestellung 1045 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3D1210KS |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 1200V 10A TO2473
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.66 EUR |
| 10+ | 10.09 EUR |
| 100+ | 8.74 EUR |
| 600+ | 6.6 EUR |
| UJ3D1210KS |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
auf Bestellung 1045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.52 EUR |
| 10+ | 10.14 EUR |
| 100+ | 7.53 EUR |
| 600+ | 7.04 EUR |