| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 25+ | 9.04 EUR |
| 100+ | 7.98 EUR |
| 250+ | 6.94 EUR |
| 500+ | 5.84 EUR |
| 1000+ | 5.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ3D1210TS Qorvo
Description: DIODE SIL CARB 1200V 10A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 510pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 110 µA @ 1200 V.
Weitere Produktangebote UJ3D1210TS nach Preis ab 6.53 EUR bis 15.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UJ3D1210TS | onsemi |
 Description: DIODE SIL CARB 1200V 10A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 510pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 110 µA @ 1200 V |
auf Bestellung 9913 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
UJ3D1210TS | onsemi |
SiC Schottky Diodes 1200V/10ASICDIODEG3TO |
auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UJ3D1210TS |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
Description: DIODE SIL CARB 1200V 10A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 510pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
auf Bestellung 9913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.73 EUR |
| 50+ | 6.95 EUR |
| 100+ | 6.53 EUR |
| UJ3D1210TS |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
SiC Schottky Diodes 1200V/10ASICDIODEG3TO
auf Bestellung 2194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.18 EUR |
| 10+ | 8.29 EUR |
| 100+ | 8.16 EUR |
| 1000+ | 7.66 EUR |