| Anzahl | Preis |
|---|---|
| 1+ | 13.15 EUR |
| 25+ | 11.42 EUR |
| 100+ | 9.87 EUR |
| 250+ | 9.15 EUR |
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Technische Details UJ3D1220K2 Qorvo
Description: DIODE SIL CARB 1200V 20A TO2472, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 190 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 810pF @ 1V, 1MHz.
Weitere Produktangebote UJ3D1220K2 nach Preis ab 9.17 EUR bis 19.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3D1220K2 | onsemi |
 Description: DIODE SIL CARB 1200V 20A TO2472Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 190 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 810pF @ 1V, 1MHz |
auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D1220K2 | onsemi |
SiC Schottky Diodes 1200V/20ASICDIODEG3TO247-2 |
auf Bestellung 927 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3D1220K2 |
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Hersteller: onsemi
Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
Description: DIODE SIL CARB 1200V 20A TO2472
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 190 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 810pF @ 1V, 1MHz
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.27 EUR |
| 25+ | 11.53 EUR |
| 100+ | 9.96 EUR |
| 250+ | 9.17 EUR |
| UJ3D1220K2 |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/20ASICDIODEG3TO247-2
SiC Schottky Diodes 1200V/20ASICDIODEG3TO247-2
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.57 EUR |
| 10+ | 11.7 EUR |
| 100+ | 10.14 EUR |