| Anzahl | Preis |
|---|---|
| 1+ | 15.36 EUR |
| 25+ | 13.36 EUR |
| 100+ | 11.53 EUR |
| 250+ | 10.68 EUR |
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Technische Details UJ3D1220KSD Qorvo
Description: DIODE SIL CARB 1200V 10A TO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1020pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 220 µA @ 1200 V.
Weitere Produktangebote UJ3D1220KSD nach Preis ab 11.44 EUR bis 23.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3D1220KSD | onsemi |
 Description: DIODE SIL CARB 1200V 10A TO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1020pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 1200 V |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3D1220KSD | onsemi |
SiC Schottky Diodes 1200V/20ASICDIODEDUAL |
auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3D1220KSD |
|
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
Description: DIODE SIL CARB 1200V 10A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1020pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 1200 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.16 EUR |
| 30+ | 13.55 EUR |
| 120+ | 11.66 EUR |
| 510+ | 11.44 EUR |
| UJ3D1220KSD |
|
Hersteller: onsemi
SiC Schottky Diodes 1200V/20ASICDIODEDUAL
SiC Schottky Diodes 1200V/20ASICDIODEDUAL
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 23.39 EUR |
| 10+ | 14.57 EUR |
| 100+ | 13.02 EUR |