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UJ4SC075005L8S

UJ4SC075005L8S onsemi

uj4sc075005l8s-d.pdf Hersteller: onsemi
Description: SICFET N-CH 750V 120A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+93.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details UJ4SC075005L8S onsemi

Description: SICFET N-CH 750V 120A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V, Power Dissipation (Max): 1153W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V.

Weitere Produktangebote UJ4SC075005L8S nach Preis ab 52.71 EUR bis 104.95 EUR

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UJ4SC075005L8S UJ4SC075005L8S Hersteller : Qorvo UJ4SC075005L8S_Data_Sheet-3177181.pdf SiC MOSFETs UJ4SC075005L8S
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+104.95 EUR
1000+52.73 EUR
4000+52.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UJ4SC075005L8S UJ4SC075005L8S Hersteller : onsemi uj4sc075005l8s-d.pdf Description: SICFET N-CH 750V 120A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 12V
Power Dissipation (Max): 1153W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH