UJ4SC075011B7S onsemi
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Produktrezensionen
Produktbewertung abgeben
Technische Details UJ4SC075011B7S onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 104A (Tc), Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 10mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V.
Weitere Produktangebote UJ4SC075011B7S nach Preis ab 33.68 EUR bis 70.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UJ4SC075011B7S | onsemi |
SiC MOSFETs 750V/11MOSICFETG4TO263-7 |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
UJ4SC075011B7S | onsemi |
Description: 750V/11MOHM, N-OFF SIC STACK CAS Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
auf Bestellung 3860 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
UJ4SC075011B7S | Qorvo / UnitedSiC |
JFET |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
UJ4SC075011B7S | Qorvo |
SiC MOSFETs 750V/11mO,SICFET,G4,TO263-7 |
auf Bestellung 690 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
UJ4SC075011B7S | ONSEMI |
Description: ONSEMI - UJ4SC075011B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, D2PAK tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 750V rohsCompliant: YES Dauer-Drainstrom Id: 104A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 5.5V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 357W SVHC: No SVHC (17-Jan-2023) Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 12V Drain-Source-Durchgangswiderstand: 11mohm |
auf Bestellung 481 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| UJ4SC075011B7S |
|
Hersteller: onsemi
SiC MOSFETs 750V/11MOSICFETG4TO263-7
SiC MOSFETs 750V/11MOSICFETG4TO263-7
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.14 EUR |
| 10+ | 41.75 EUR |
| 500+ | 41.55 EUR |
| 800+ | 39 EUR |
| UJ4SC075011B7S |
|
Hersteller: onsemi
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, N-OFF SIC STACK CAS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 3860 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 54.37 EUR |
| 10+ | 41.94 EUR |
| UJ4SC075011B7S |
|
Hersteller: Qorvo / UnitedSiC
JFET
JFET
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 67.82 EUR |
| 25+ | 62.53 EUR |
| 250+ | 53.41 EUR |
| 800+ | 53.38 EUR |
| UJ4SC075011B7S |
|
Hersteller: Qorvo
SiC MOSFETs 750V/11mO,SICFET,G4,TO263-7
SiC MOSFETs 750V/11mO,SICFET,G4,TO263-7
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 70.98 EUR |
| 25+ | 62.64 EUR |
| 100+ | 54.29 EUR |
| 250+ | 45.93 EUR |
| 500+ | 41.78 EUR |
| 800+ | 35.52 EUR |
| 2400+ | 33.68 EUR |
| UJ4SC075011B7S |
|
Hersteller: ONSEMI
Description: ONSEMI - UJ4SC075011B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, D2PAK
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 104A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 357W
SVHC: No SVHC (17-Jan-2023)
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 11mohm
Description: ONSEMI - UJ4SC075011B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 104 A, 750 V, 11 mohm, D2PAK
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 750V
rohsCompliant: YES
Dauer-Drainstrom Id: 104A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.5V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 357W
SVHC: No SVHC (17-Jan-2023)
Bauform - Transistor: D2PAK
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 12V
Drain-Source-Durchgangswiderstand: 11mohm
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)