Technische Details ULN2803AFWG,C,EL Toshiba
Description: TRANS 8NPN DARL 50V 0.5A 18SOL, Packaging: Tape & Reel (TR), Package / Case: 18-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Transistor Type: 8 NPN Darlington, Operating Temperature: -40°C ~ 85°C (TA), Power - Max: 1.31W, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V, Supplier Device Package: 18-SOP, Part Status: Obsolete.
Weitere Produktangebote ULN2803AFWG,C,EL
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ULN2803AFWG,C,EL | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 8NPN DARL 50V 0.5A 18SOL Packaging: Cut Tape (CT) Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Transistor Type: 8 NPN Darlington Operating Temperature: -40°C ~ 85°C (TA) Power - Max: 1.31W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 18-SOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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ULN2803AFWG,C,EL | Hersteller : Toshiba Semiconductor and Storage |
Description: TRANS 8NPN DARL 50V 0.5A 18SOL Packaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Transistor Type: 8 NPN Darlington Operating Temperature: -40°C ~ 85°C (TA) Power - Max: 1.31W Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Supplier Device Package: 18-SOP Part Status: Obsolete |
Produkt ist nicht verfügbar |