UMB10NTN ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.89 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| 24000+ | 0.15 EUR |
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Technische Details UMB10NTN ROHM Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6, Part Status: Active, Supplier Device Package: UMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 2.2kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote UMB10NTN nach Preis ab 0.23 EUR bis 0.92 EUR
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UMB10NTN | Rohm Semiconductor |
 Description: TRANS PREBIAS DUAL PNP UMT6Part Status: Active Supplier Device Package: UMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 2629 Stücke: Lieferzeit 10-14 Tag (e) |
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| UMB10-N-TN |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| UMB10NTN |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP UMT6
Part Status: Active
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP UMT6
Part Status: Active
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.23 EUR |
| UMB10-N-TN |
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)