UMD9NTR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS 1NPN 1PNP 50V UMT6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: UMT6
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 40+ | 0.44 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
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Technische Details UMD9NTR Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: UMT6.
Weitere Produktangebote UMD9NTR nach Preis ab 0.15 EUR bis 0.74 EUR
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UMD9NTR | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased NPN/PNP 50V 70MA |
auf Bestellung 5998 Stücke: Lieferzeit 10-14 Tag (e) |
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| UMD9 N TR | Hersteller : ROHM | SOT26/SOT363 |
auf Bestellung 11631 Stücke: Lieferzeit 21-28 Tag (e) |
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UMD9NTR | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V UMT6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: UMT6 |
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