UMH37NTN Rohm Semiconductor
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 348+ | 0.42 EUR |
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Technische Details UMH37NTN Rohm Semiconductor
Description: NPN+NPN, SOT-363, DUAL DIGITAL T, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 400mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V, Frequency - Transition: 35MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: UMT6.
Weitere Produktangebote UMH37NTN nach Preis ab 0.26 EUR bis 1.34 EUR
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UMH37NTN | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 20V 400mA 150mW 6-Pin UMT T/R |
auf Bestellung 1694 Stücke: Lieferzeit 14-21 Tag (e) |
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UMH37NTN | Hersteller : ROHM Semiconductor |
Digital Transistors TRANSISTOR |
auf Bestellung 856 Stücke: Lieferzeit 10-14 Tag (e) |
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UMH37NTN | Hersteller : Rohm Semiconductor |
Description: NPN+NPN, SOT-363, DUAL DIGITAL T Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Frequency - Transition: 35MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 |
auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
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UMH37NTN | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 20V 400mA 150mW 6-Pin UMT T/R |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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UMH37NTN | Hersteller : Rohm Semiconductor |
Description: NPN+NPN, SOT-363, DUAL DIGITAL T Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 400mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V Frequency - Transition: 35MHz Resistor - Base (R1): 10kOhms Supplier Device Package: UMT6 |
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