UMH4NTN ROHM Semiconductor


datasheet?p=UMH4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-363
auf Bestellung 2424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.89 EUR
10+0.63 EUR
100+0.29 EUR
1000+0.23 EUR
3000+0.19 EUR
9000+0.17 EUR
24000+0.15 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details UMH4NTN ROHM Semiconductor

Description: TRANS 2NPN PREBIAS 0.15W UMT6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: UMT6.

Weitere Produktangebote UMH4NTN nach Preis ab 0.23 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
UMH4NTN UMH4NTN Rohm Semiconductor datasheet?p=UMH4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
33+0.64 EUR
100+0.32 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
UMH4NTN datasheet?p=UMH4N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
33+0.64 EUR
100+0.32 EUR
500+0.29 EUR
1000+0.23 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH