UMWIRF7343TR
Hersteller: UMWDescription: MOSFET N/P-CH 55V 4.7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
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Technische Details UMWIRF7343TR UMW
Description: MOSFET N/P-CH 55V 4.7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP.
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UMWIRF7343TR | Hersteller : UMW |
Description: MOSFET N/P-CH 55V 4.7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V, 690pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V, 90mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V, 38nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP |
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