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UNR411400A

UNR411400A Panasonic Electronic Components

UNR411x_Series_Rev_Nov_2011.pdf Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 1670 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
72+0.36 EUR
82+ 0.32 EUR
100+ 0.27 EUR
500+ 0.25 EUR
Mindestbestellmenge: 72
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Technische Details UNR411400A Panasonic Electronic Components

Description: TRANS PREBIAS PNP 300MW NS-B1, Packaging: Tape & Box (TB), Package / Case: 3-SIP, Mounting Type: Through Hole, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: NS-B1, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 80 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

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UNR411400A UNR411400A Hersteller : Panasonic Electronic Components UNR411x_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 300MW NS-B1
Packaging: Tape & Box (TB)
Package / Case: 3-SIP
Mounting Type: Through Hole
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: NS-B1
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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