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UNR5119G0L

UNR5119G0L Panasonic Electronic Components

UNR511xG_Series_Rev_Nov_2011.pdf Hersteller: Panasonic Electronic Components
Description: TRANS PREBIAS PNP 50V SMINI3
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: SMini3-F2
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 2897 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
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Technische Details UNR5119G0L Panasonic Electronic Components

Description: TRANS PREBIAS PNP 50V SMINI3, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V, Supplier Device Package: SMini3-F2, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 80 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

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UNR5119G0L UNR5119G0L Hersteller : Panasonic Electronic Components UNR511xG_Series_Rev_Nov_2011.pdf Description: TRANS PREBIAS PNP 50V SMINI3
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Supplier Device Package: SMini3-F2
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 80 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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