| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.93 EUR |
| 1000+ | 0.84 EUR |
| 10000+ | 0.74 EUR |
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Technische Details UPA2463T1Q-E1-AX Renesas
Description: MOSFET N-CH 20V 6A 8HUSON, Packaging: Bulk, Package / Case: 8-WFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: 8-HUSON (2.7x2), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V.
Weitere Produktangebote UPA2463T1Q-E1-AX nach Preis ab 1.11 EUR bis 1.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| UPA2463T1Q-E1-AX | Renesas Electronics Corporation |
Description: MOSFET N-CH 20V 6A 8HUSON Packaging: Bulk Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: 8-HUSON (2.7x2) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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| UPA2463T1Q-E1-AX | RENESAS | QFN |
auf Bestellung 2915 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| UPA2463T1Q-E1-AX |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 20V 6A 8HUSON
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-HUSON (2.7x2)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET N-CH 20V 6A 8HUSON
Packaging: Bulk
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-HUSON (2.7x2)
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 503+ | 1.11 EUR |
| UPA2463T1Q-E1-AX |
Hersteller: RENESAS
QFN
QFN
auf Bestellung 2915 Stücke:
Lieferzeit 21-28 Tag (e)