UPA2590T1H-T2-AT Renesas Electronics America Inc
Hersteller: Renesas Electronics America Inc
Description: POWER, 4.5A, 30V, N-CH MOSFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-VSOF
Description: POWER, 4.5A, 30V, N-CH MOSFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.24W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-VSOF
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 541+ | 0.97 EUR |
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Technische Details UPA2590T1H-T2-AT Renesas Electronics America Inc
Description: POWER, 4.5A, 30V, N-CH MOSFET, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.24W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-VSOF.