UPA2738GR-E1-AX Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.88 EUR |
| 5000+ | 0.82 EUR |
| 7500+ | 0.8 EUR |
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Technische Details UPA2738GR-E1-AX Renesas Electronics Corporation
Description: MOSFET P-CH 30V 10A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote UPA2738GR-E1-AX nach Preis ab 0.76 EUR bis 3.15 EUR
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UPA2738GR-E1-AX | Renesas Electronics |
MOSFETs POWER TRANSISTOR |
auf Bestellung 4835 Stücke: Lieferzeit 10-14 Tag (e) |
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UPA2738GR-E1-AX | Renesas Electronics Corporation |
Description: MOSFET P-CH 30V 10A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 10325 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UPA2738GR-E1-AX |
|
Hersteller: Renesas Electronics
MOSFETs POWER TRANSISTOR
MOSFETs POWER TRANSISTOR
auf Bestellung 4835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 2500+ | 0.76 EUR |
| UPA2738GR-E1-AX |
|
Hersteller: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 10325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |