UPA2812T1L-E1-AT Renesas
Hersteller: Renesas
HVSON 8/PCH, SINGLE,
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Technische Details UPA2812T1L-E1-AT Renesas
Description: MOSFET P-CH 30V 30A 8HVSON, Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-HVSON (3.3x3.3), Power Dissipation (Max): 1.5W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote UPA2812T1L-E1-AT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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UPA2812T1L-E1-AT | Renesas Electronics America Inc |
Description: MOSFET P-CH 30V 30A 8HVSON Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-HVSON (3.3x3.3) Power Dissipation (Max): 1.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| UPA2812T1L-E1-AT | Renesas Electronics |
MOSFET Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| UPA2812T1L-E1-AT |
|
Hersteller: Renesas Electronics America Inc
Description: MOSFET P-CH 30V 30A 8HVSON
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HVSON (3.3x3.3)
Power Dissipation (Max): 1.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 30A 8HVSON
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-HVSON (3.3x3.3)
Power Dissipation (Max): 1.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UPA2812T1L-E1-AT |
|
Hersteller: Renesas Electronics
MOSFET Power MOSFET
MOSFET Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH