UPA2826T1S-E2-AT Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: 8P HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UPA2826T1S-E2-AT Renesas Electronics Corporation
Description: 8P HWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V, Power Dissipation (Max): 20W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-HWSON (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V.
Weitere Produktangebote UPA2826T1S-E2-AT nach Preis ab 1.23 EUR bis 2.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
UPA2826T1S-E2-AT | Hersteller : Renesas Electronics |
MOSFETs POWER TRANSISTOR MOS-IC |
auf Bestellung 3757 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
UPA2826T1S-E2-AT | Hersteller : Renesas Electronics Corporation |
Description: 8P HWSON Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V Power Dissipation (Max): 20W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V |
auf Bestellung 9754 Stücke: Lieferzeit 10-14 Tag (e) |
|