UPA2826T1S-E2-AT Renesas Electronics Corporation
Hersteller: Renesas Electronics Corporation
Description: 8P HWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.38 EUR |
| 50+ | 2.57 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.86 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Produktbewertung abgeben
Technische Details UPA2826T1S-E2-AT Renesas Electronics Corporation
Description: 8P HWSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V, Power Dissipation (Max): 20W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: 8-HWSON (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V.
Weitere Produktangebote UPA2826T1S-E2-AT
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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UPA2826T1S-E2-AT | Renesas Electronics Corporation |
Description: 8P HWSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V Power Dissipation (Max): 20W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: 8-HWSON (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UPA2826T1S-E2-AT |
|
Hersteller: Renesas Electronics Corporation
Description: 8P HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Description: 8P HWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V
Power Dissipation (Max): 20W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: 8-HWSON (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH