UPA2826T1S-E2-AT Renesas Electronics Corporation

Description: 8P HWSON, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Part Status: Active, Supplier Device Package: 8-HWSON (3.3x3.3), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 20W (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 13.5A, 8V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).