UPA895TS-T3-A CEL
Hersteller: CEL
Description: RF TRANS 2NPN 5.5V 6.5GHZ 6SMINI
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 5.5V
Current - Collector (Ic) (Max): 100mA
Power - Max: 130mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Frequency - Transition: 6.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Supplier Device Package: 6-Super Lead-Less MiniMold
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
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Technische Details UPA895TS-T3-A CEL
Description: RF TRANS 2NPN 5.5V 6.5GHZ 6SMINI, Part Status: Obsolete, Voltage - Collector Emitter Breakdown (Max): 5.5V, Current - Collector (Ic) (Max): 100mA, Power - Max: 130mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Frequency - Transition: 6.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V, Supplier Device Package: 6-Super Lead-Less MiniMold, Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz.
Weitere Produktangebote UPA895TS-T3-A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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UPA895TS-T3-A | Renesas Electronics America Inc |
Description: RF SMALL SIGNAL TRANSISTOR Part Status: Obsolete Supplier Device Package: 6-Super Lead-Less MiniMold Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Frequency - Transition: 6.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Voltage - Collector Emitter Breakdown (Max): 5.5V Current - Collector (Ic) (Max): 100mA Power - Max: 130mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| UPA895TS-T3-A |
|
Hersteller: Renesas Electronics America Inc
Description: RF SMALL SIGNAL TRANSISTOR
Part Status: Obsolete
Supplier Device Package: 6-Super Lead-Less MiniMold
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Frequency - Transition: 6.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 5.5V
Current - Collector (Ic) (Max): 100mA
Power - Max: 130mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
Description: RF SMALL SIGNAL TRANSISTOR
Part Status: Obsolete
Supplier Device Package: 6-Super Lead-Less MiniMold
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Frequency - Transition: 6.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 5.5V
Current - Collector (Ic) (Max): 100mA
Power - Max: 130mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH