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US1J R3G

US1J R3G Taiwan Semiconductor Corporation

US1A%20SERIES_N2102.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.32 EUR
3600+ 0.29 EUR
Mindestbestellmenge: 1800
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Technische Details US1J R3G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.

Weitere Produktangebote US1J R3G nach Preis ab 0.39 EUR bis 0.84 EUR

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US1J R3G US1J R3G Hersteller : Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.73 EUR
100+ 0.51 EUR
500+ 0.39 EUR
Mindestbestellmenge: 21
US1J R3G US1J R3G Hersteller : Taiwan Semiconductor us1a20series_n2102.pdf Diode Switching 600V 1A 2-Pin SMA T/R
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
US1J R3G US1J R3G Hersteller : Taiwan Semiconductor us1a20series_n2102.pdf Diode Switching 600V 1A 2-Pin SMA
Produkt ist nicht verfügbar
US1J R3G US1J R3G Hersteller : Taiwan Semiconductor US1A%20SERIES_N2102.pdf Rectifiers 75ns, 1A, 600V, High Efficient Recovery Rectifier
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