US5U35TR Rohm Semiconductor

Description: MOSFET P-CH 45V 700MA TUMT5, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TUMT5, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 800mOhm @ 700mA, 10V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD (5 Leads), Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V.