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US6M2TR

US6M2TR Rohm Semiconductor

datasheet?p=US6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.4 EUR
6000+ 0.38 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
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Technische Details US6M2TR Rohm Semiconductor

Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A, Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.

Weitere Produktangebote US6M2TR nach Preis ab 0.38 EUR bis 1.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
US6M2TR US6M2TR Hersteller : Rohm Semiconductor datasheet?p=US6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 97862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.9 EUR
100+ 0.63 EUR
500+ 0.52 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 17
US6M2TR US6M2TR Hersteller : ROHM Semiconductor datasheet?p=US6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET N+P 20V 1.5A/1A
auf Bestellung 15360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.93 EUR
100+ 0.64 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
3000+ 0.41 EUR
6000+ 0.38 EUR
Mindestbestellmenge: 3
US6M2TR datasheet?p=US6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
auf Bestellung 550000 Stücke:
Lieferzeit 18-25 Tag (e)
US6M2TR Hersteller : ROHM SEMICONDUCTOR datasheet?p=US6M2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key US6M2TR Multi channel transistors
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