US6M2TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.43 EUR |
| 9000+ | 0.42 EUR |
| 15000+ | 0.39 EUR |
| 21000+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details US6M2TR Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, 20V, Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A, Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V, Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active.
Weitere Produktangebote US6M2TR nach Preis ab 0.44 EUR bis 1.88 EUR
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US6M2TR | ROHM Semiconductor |
MOSFETs N+P 20V 1.5A/1A |
auf Bestellung 12520 Stücke: Lieferzeit 10-14 Tag (e) |
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US6M2TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active |
auf Bestellung 33455 Stücke: Lieferzeit 10-14 Tag (e) |
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| US6M2TR |
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auf Bestellung 550000 Stücke: Lieferzeit 18-25 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| US6M2TR |
|
Hersteller: ROHM Semiconductor
MOSFETs N+P 20V 1.5A/1A
MOSFETs N+P 20V 1.5A/1A
auf Bestellung 12520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.44 EUR |
| US6M2TR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Description: MOSFET N/P-CH 30V/20V 1.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A, 1A
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
auf Bestellung 33455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| US6M2TR |
|
auf Bestellung 550000 Stücke:
Lieferzeit 18-25 Tag (e)