| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.74 EUR |
| 3000+ | 0.61 EUR |
| 6000+ | 0.6 EUR |
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Technische Details UT6K3TCR1 ROHM Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8, Part Status: Active, Supplier Device Package: HUML2020L8, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote UT6K3TCR1 nach Preis ab 0.75 EUR bis 2.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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UT6K3TCR1 | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 5.5A HUML2020L8Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
auf Bestellung 2961 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6K3TCR1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 2961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.59 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |