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UT6KC5TCR

UT6KC5TCR ROHM Semiconductor

datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs AECQ
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
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1+2.94 EUR
10+2.06 EUR
100+1.49 EUR
500+1.14 EUR
1000+1.04 EUR
3000+1.02 EUR
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Technische Details UT6KC5TCR ROHM Semiconductor

Description: MOSFET 2N-CH 60V 3.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN2020-8D.

Weitere Produktangebote UT6KC5TCR nach Preis ab 1.27 EUR bis 3.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
UT6KC5TCR UT6KC5TCR Hersteller : Rohm Semiconductor datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
auf Bestellung 1191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.72 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
UT6KC5TCR UT6KC5TCR Hersteller : Rohm Semiconductor datasheet?p=UT6KC5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
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Im Einkaufswagen  Stück im Wert von  UAH