UT6KC5TCR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1283+ | 0.14 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1283 Stücke
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Technische Details UT6KC5TCR Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN2020-8D.
Weitere Produktangebote UT6KC5TCR nach Preis ab 0.52 EUR bis 4.69 EUR
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UT6KC5TCR | Rohm Semiconductor |
 Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R |
auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6KC5TCR | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6KC5TCR | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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UT6KC5TCR | ROHM Semiconductor |
MOSFETs AECQ |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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UT6KC5TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 3.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN2020-8D |
auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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| UT6KC5TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; 60V; 3.5A; 2W; DFN Type of transistor: N-MOSFET x2 Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: DFN Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 3.1nC Kind of channel: enhancement |
auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 210 Stücke Im Einkaufswagen Stück im Wert von UAH |
| UT6KC5TCR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
auf Bestellung 2832 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 275+ | 0.64 EUR |
| 287+ | 0.62 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.52 EUR |
| UT6KC5TCR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 2.27 EUR |
| 104+ | 1.7 EUR |
| 105+ | 1.64 EUR |
| 124+ | 1.37 EUR |
| 139+ | 1.2 EUR |
| 250+ | 1.07 EUR |
| UT6KC5TCR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
Trans MOSFET N-CH 60V 3.5A 8-Pin HUML T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 2.27 EUR |
| 104+ | 1.67 EUR |
| 105+ | 1.58 EUR |
| 124+ | 1.3 EUR |
| 139+ | 1.11 EUR |
| 250+ | 0.96 EUR |
| UT6KC5TCR |
|
Hersteller: ROHM Semiconductor
MOSFETs AECQ
MOSFETs AECQ
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.25 EUR |
| 3000+ | 1.09 EUR |
| UT6KC5TCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
Description: MOSFET 2N-CH 60V 3.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN2020-8D
auf Bestellung 1191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.69 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.51 EUR |
| UT6KC5TCR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 60V; 3.5A; 2W; DFN
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: DFN
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 3.1nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; 60V; 3.5A; 2W; DFN
Type of transistor: N-MOSFET x2
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: DFN
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 3.1nC
Kind of channel: enhancement
auf Bestellung 2832 Stücke:
Lieferzeit 14-21 Tag (e)