| Anzahl | Preis |
|---|---|
| 1+ | 3.03 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.91 EUR |
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Technische Details UT6KC5TCR ROHM Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerUDFN, Packaging: Tape & Reel (TR), Supplier Device Package: DFN2020-8D, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V.
Weitere Produktangebote UT6KC5TCR nach Preis ab 1.27 EUR bis 3.94 EUR
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UT6KC5TCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 3.5A 8DFNSupplier Device Package: DFN2020-8D Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) |
auf Bestellung 1191 Stücke: Lieferzeit 10-14 Tag (e) |
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