Technische Details UTV080 GHZ
Description: RF TRANS NPN 28V 860MHZ 55JV, Packaging: Bulk, Package / Case: 55JV, Mounting Type: Channel, DIN Rail Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 9dB ~ 10dB, Power - Max: 65W, Current - Collector (Ic) (Max): 2.5A, Voltage - Collector Emitter Breakdown (Max): 28V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V, Frequency - Transition: 470MHz ~ 860MHz, Supplier Device Package: 55JV.
Weitere Produktangebote UTV080
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| UTV080 | Hersteller : GHZ | TO-55 |
auf Bestellung 320 Stücke: Lieferzeit 21-28 Tag (e) |
||
| UTV080 | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 28V 860MHZ 55JV Packaging: Bulk Package / Case: 55JV Mounting Type: Channel, DIN Rail Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 9dB ~ 10dB Power - Max: 65W Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 28V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 470MHz ~ 860MHz Supplier Device Package: 55JV |
Produkt ist nicht verfügbar |
||
| UTV080 | Hersteller : Microsemi | RF Bipolar Transistors Bipolar/LDMOS Transistor |
Produkt ist nicht verfügbar |