_Top.jpg "V10P22HM3/H")
V10P22HM3/H Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
| Anzahl | Preis |
|---|---|
| 1500+ | 0.71 EUR |
| 3000+ | 0.67 EUR |
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Technische Details V10P22HM3/H Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A, Qualification: AEC-Q101, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 3.1A, Capacitance @ Vr, F: 500pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 150 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active.
Weitere Produktangebote V10P22HM3/H nach Preis ab 0.87 EUR bis 1.6 EUR
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V10P22HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3.1A TO277A Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3.1A Capacitance @ Vr, F: 500pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 3750 Stücke: Lieferzeit 10-14 Tag (e) |
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| V10P22HM3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.6 EUR |
| 14+ | 1.32 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.87 EUR |