V10PM6HM3/I Vishay General Semiconductor
auf Bestellung 6420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.08 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.47 EUR |
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Technische Details V10PM6HM3/I Vishay General Semiconductor
Description: DIODE SCHOTTKY 60V 10A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 1650pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A, Current - Reverse Leakage @ Vr: 800 µA @ 60 V, Qualification: AEC-Q101.
Weitere Produktangebote V10PM6HM3/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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V10PM6HM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 60V 10A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1650pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 60 V Qualification: AEC-Q101 |
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