V12PM153-M3/I

V12PM153-M3/I Vishay General Semiconductor - Diodes Division


v12pm153.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3.7A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.7A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 6500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6500+0.38 EUR
Mindestbestellmenge: 6500
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Technische Details V12PM153-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 150V 3.7A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 820pF @ 4V, 1MHz, Current - Average Rectified (Io): 3.7A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A, Current - Reverse Leakage @ Vr: 150 µA @ 150 V, Qualification: AEC-Q101.

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