V20120C-E3/4W Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO2203
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 6+ | 3.45 EUR |
| 50+ | 1.68 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.1 EUR |
| 2000+ | 1.02 EUR |
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Technische Details V20120C-E3/4W Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO2203, Current - Reverse Leakage @ Vr: 700 µA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 120 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: TO-220-3, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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V20120C-E3/4W | Hersteller : Vishay General Semiconductor |
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