V2P6XHM3/I Vishay Semiconductors
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| 10000+ | 0.14 EUR |
| 20000+ | 0.12 EUR |
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Technische Details V2P6XHM3/I Vishay Semiconductors
Description: DIODE SCHOTTKY 60V 2A DO220AA, Packaging: Tape & Reel (TR), Package / Case: DO-220AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 240pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-220AA (SMP), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A, Current - Reverse Leakage @ Vr: 100 µA @ 60 V, Qualification: AEC-Q101.
Weitere Produktangebote V2P6XHM3/I
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V2P6XHM3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 60V 2A DO220AAPackaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Qualification: AEC-Q101 |
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