V30KM100-M3/H Vishay General Semiconductor
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.65 EUR |
| 1500+ | 0.88 EUR |
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Technische Details V30KM100-M3/H Vishay General Semiconductor
Description: DIODE SCHOTTKY 100V 4.4A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 2450pF @ 4V, 1MHz, Current - Average Rectified (Io): 4.4A, Supplier Device Package: FlatPAK (5x6), Operating Temperature - Junction: -40°C ~ 165°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A, Current - Reverse Leakage @ Vr: 300 µA @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote V30KM100-M3/H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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V30KM100-M3/H | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 100V 4.4A FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2450pF @ 4V, 1MHz Current - Average Rectified (Io): 4.4A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Current - Reverse Leakage @ Vr: 300 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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