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V35PWM63-M3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4400pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 35 A
Current - Reverse Leakage @ Vr: 55 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4500+ | 0.78 EUR |
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Technische Details V35PWM63-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 4400pF @ 4V, 1MHz, Current - Average Rectified (Io): 35A, Supplier Device Package: SlimDPAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 710 mV @ 35 A, Current - Reverse Leakage @ Vr: 55 µA @ 60 V, Qualification: AEC-Q101.
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V35PWM63-M3/I | Hersteller : Vishay |
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