Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > V7N103HM3/I
V7N103HM3/I

V7N103HM3/I Vishay General Semiconductor - Diodes Division

v7n103.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
25+0.71 EUR
100+0.61 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 17
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Technische Details V7N103HM3/I Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTK 100V 2.2A DFN3820A, Packaging: Tape & Reel (TR), Package / Case: 2-VDFN, Mounting Type: Surface Mount, Wettable Flank, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 860pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.2A, Supplier Device Package: DFN3820A, Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A, Current - Reverse Leakage @ Vr: 330 µA @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote V7N103HM3/I nach Preis ab 0.32 EUR bis 1.12 EUR

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V7N103HM3/I V7N103HM3/I Hersteller : Vishay Semiconductors v7n103.pdf Schottky Diodes & Rectifiers 7A, 100V, DFN3820A TRENCH SKY RECT.
auf Bestellung 27371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.12 EUR
10+0.78 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.36 EUR
5000+0.34 EUR
14000+0.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
V7N103HM3/I V7N103HM3/I Hersteller : Vishay General Semiconductor - Diodes Division v7n103.pdf Description: DIODE SCHOTTK 100V 2.2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH