V7N3103-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: 7A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 20+ | 0.89 EUR |
| 25+ | 0.74 EUR |
| 100+ | 0.58 EUR |
| 250+ | 0.50 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.41 EUR |
| 2500+ | 0.36 EUR |
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Technische Details V7N3103-M3/I Vishay General Semiconductor - Diodes Division
Description: 7A, 100V DFN33A TMBS RECT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 860pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.5A, Supplier Device Package: DFN33A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A, Current - Reverse Leakage @ Vr: 330 µA @ 100 V.
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V7N3103-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: 7A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 860pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 7 A Current - Reverse Leakage @ Vr: 330 µA @ 100 V |
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