V7N3L63HM3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details V7N3L63HM3/I Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 110 µA @ 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A, Voltage - DC Reverse (Vr) (Max): 60 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: DFN33A, Current - Average Rectified (Io): 2.8A, Capacitance @ Vr, F: 1150pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote V7N3L63HM3/I nach Preis ab 0.44 EUR bis 2.26 EUR
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V7N3L63HM3/I | Vishay General Semiconductor - Diodes Division |
Description: 7A, 60V DFN33A TMBS RECT Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 110 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A Voltage - DC Reverse (Vr) (Max): 60 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: DFN33A Current - Average Rectified (Io): 2.8A Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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V7N3L63HM3/I | Vishay |
Schottky Diodes & Rectifiers 7A, 60V DFN33A TMBS RECT |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
|
| V7N3L63HM3/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: 7A, 60V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 20+ | 1.06 EUR |
| 25+ | 0.99 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.48 EUR |
| 2500+ | 0.44 EUR |
| V7N3L63HM3/I |
|
Hersteller: Vishay
Schottky Diodes & Rectifiers 7A, 60V DFN33A TMBS RECT
Schottky Diodes & Rectifiers 7A, 60V DFN33A TMBS RECT
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.42 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.6 EUR |
| 6000+ | 0.52 EUR |
| 12000+ | 0.51 EUR |