V8P22-M3/H Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.53 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.45 EUR |
| 1500+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
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Technische Details V8P22-M3/H Vishay General Semiconductor
Description: DIODE SCHOTTKY 200V 2.9A TO277A, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 100 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-277A (SMPC), Current - Average Rectified (Io): 2.9A, Capacitance @ Vr, F: 440pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote V8P22-M3/H nach Preis ab 0.56 EUR bis 1.55 EUR
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V8P22-M3/H | Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 200V 2.9A TO277APackage / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 2.9A Capacitance @ Vr, F: 440pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount |
auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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| V8P22-M3/H |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Description: DIODE SCHOTTKY 200V 2.9A TO277A
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 440pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 18+ | 0.98 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |