V9N3L63HM3/I Vishay General Semiconductor - Diodes Division


v9n3l63.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+0.45 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details V9N3L63HM3/I Vishay General Semiconductor - Diodes Division

Description: 9A, 60V DFN33A TMBS RECT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 1550pF @ 4V, 1MHz, Current - Average Rectified (Io): 3.1A, Supplier Device Package: DFN33A, Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A, Current - Reverse Leakage @ Vr: 200 µA @ 60 V, Qualification: AEC-Q101.

Weitere Produktangebote V9N3L63HM3/I nach Preis ab 0.48 EUR bis 1.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
V9N3L63HM3/I V9N3L63HM3/I Vishay General Semiconductor - Diodes Division v9n3l63.pdf Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.24 EUR
20+1.09 EUR
25+1.02 EUR
100+0.83 EUR
250+0.77 EUR
500+0.67 EUR
1000+0.52 EUR
2500+0.48 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V9N3L63HM3/I v9n3l63.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 60V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1550pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.1A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
20+1.09 EUR
25+1.02 EUR
100+0.83 EUR
250+0.77 EUR
500+0.67 EUR
1000+0.52 EUR
2500+0.48 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH