Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > V9N3M103HM3/I
V9N3M103HM3/I

V9N3M103HM3/I Vishay General Semiconductor - Diodes Division

v9n3m103.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DFN33A
Current - Average Rectified (Io): 2.8A
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6000+0.38 EUR
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details V9N3M103HM3/I Vishay General Semiconductor - Diodes Division

Description: 9A, 100V DFN33A TMBS RECT, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 220 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: DFN33A, Current - Average Rectified (Io): 2.8A, Capacitance @ Vr, F: 1100pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote V9N3M103HM3/I nach Preis ab 0.4 EUR bis 1.71 EUR

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V9N3M103HM3/I V9N3M103HM3/I Vishay General Semiconductor - Diodes Division v9n3m103.pdf Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M103HM3/I V9N3M103HM3/I Vishay v9n3m103.pdf Schottky Diodes & Rectifiers 9A, 100V DFN33A TMBS RECT
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.71 EUR
10+1.06 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2500+0.45 EUR
6000+0.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M103HM3/I v9n3m103.pdf
V9N3M103HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1100pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.8A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A
Current - Reverse Leakage @ Vr: 220 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
17+1.06 EUR
19+0.93 EUR
25+0.88 EUR
100+0.72 EUR
250+0.66 EUR
500+0.57 EUR
1000+0.45 EUR
2500+0.41 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
V9N3M103HM3/I v9n3m103.pdf
V9N3M103HM3/I
Hersteller: Vishay
Schottky Diodes & Rectifiers 9A, 100V DFN33A TMBS RECT
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.71 EUR
10+1.06 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
2500+0.45 EUR
6000+0.4 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH