VB10150S-E3/4W VISHAY
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. forward voltage: 1.2V
Leakage current: 0.15mA
Max. forward impulse current: 120A
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Technische Details VB10150S-E3/4W VISHAY
Description: DIODE SCHOTTKY 150V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A, Current - Reverse Leakage @ Vr: 150 µA @ 150 V.
Weitere Produktangebote VB10150S-E3/4W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
VB10150S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 150 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
VB10150S-E3/4W | Vishay General Semiconductor |
Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VB10150S-E3/4W |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VB10150S-E3/4W |
|
Hersteller: Vishay General Semiconductor
Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS
Schottky Diodes & Rectifiers 10 Amp 150 Volt Single TrenchMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH