VB60170G-E3/8W Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
| Anzahl | Preis |
|---|---|
| 800+ | 1.94 EUR |
| 1600+ | 1.8 EUR |
| 2400+ | 1.73 EUR |
| 4000+ | 1.66 EUR |
| 5600+ | 1.64 EUR |
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Technische Details VB60170G-E3/8W Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 170 V, Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A, Current - Reverse Leakage @ Vr: 450 µA @ 170 V.
Weitere Produktangebote VB60170G-E3/8W nach Preis ab 2.51 EUR bis 5.53 EUR
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VB60170G-E3/8W | Vishay General Semiconductor |
Schottky Diodes & Rectifiers 60A 170V Dual TrenchMOS |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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VB60170G-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 170V 30A TO263AB Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 170 V Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A Current - Reverse Leakage @ Vr: 450 µA @ 170 V |
auf Bestellung 11893 Stücke: Lieferzeit 10-14 Tag (e) |
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| VB60170G-E3/8W |
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Hersteller: Vishay General Semiconductor
Schottky Diodes & Rectifiers 60A 170V Dual TrenchMOS
Schottky Diodes & Rectifiers 60A 170V Dual TrenchMOS
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.69 EUR |
| VB60170G-E3/8W |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
auf Bestellung 11893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.6 EUR |
| 100+ | 2.51 EUR |